Compound semiconductor ingot and wafer


Shin-Etsu handoutai (SEH) supply the compound semiconductor ingot and various wafer (bulk and epitaxial wafer). We have a track record of supplying various As and P-based substrates.

Ingot and wafer line up

Ingot and Bare wafer Epitaxial wafer
GaP(gallium phosphide) HVPE epitaxial wafer(GaP base)
MOVPE epitaxial wafer(GaAs,InP base)



Ingot GaP
(gallium phosphide)

Method
Diameter
Type
Off axis
LEC
2"
N(non-doped)
Just
LEC
2"
N(Te doped)
Just/10deg/15deg
LEC
2-3"
P(Zn doped)
15deg

Bare wafer of GaP
(gallium phosphide)

Sufrace treat
Diameter
Type
double/single side polished
2"
N(non-doped)
single side polished
2"
N(Te doped)
single side polished
3"
P(Zn doped)
Based orientation is (100). Please contact us if you would like to need other orientation.

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HVPE epitaxial wafer

Material
Diameter
Type
GaAsP
2"
LED
We have a track record of growing GaN using the HVPE method. Please contact us if you would like to grow GaN.

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MOVPE epitaxial wafer

Material
Diameter
Type
AlGaInP/GaAs
2-6"
visible LED
AlGaAs/GaAs
2-6"
NIR LED/VCSEL
GaInAsP/GaAs
4-6"
NIR LED
GaInP/GaAs
4-6"
PV
Please contact us if you would like to manufacture with other materials. It is possible to manufacture epitaxial wafers using materials with P and/or As materials.

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