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Shin-Etsu handoutai (SEH) will supply the fablication process of compound semiconductor device for custom devices, development, prototype and pilot production. Capability of wafer process at SEH is from epitaxial wafer to device fablications. We can accept everything from the small-scale customization or product to the partial process testing.
Please contact us if you have any problems with processing materials that contain arsenic, such as GaAs. |
| Wafer fabrications | Device process | Die process | |
|---|---|---|---|
| MOVPE epitaxy | Deposition | Dicing | |
| HVPE epitaxy | Photolithography | Electrical probing and testing | |
| Lapping and polishing | Metallization | Inspection | |
| Wafer bonding | Dry & wet etching | ||
| Current construction process |
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We have a wealth of experience with GaAs systems(AlGaInP, AlGaAs).
InP system (InGaAsP) system are also available. |
| near IR-LED | |||
| near IR-LED | |||
| VCSEL | |||
| Visible-LED | |||
| Solar cell | |||
| HBT | |||
| pHEMT |
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We can also prototype InP/InGaAs system and other systems not listed in the table. We have experience in manufacturing light-emitting devices with DBR structure. We can flexibly accommodate the structures with a thick current spreading layer or DBR, which tend to increase epitaxial costs. |
| Visible-LED | |||
| for reclaim wafer | ||
| for reclaim wafer | ||
| BG |
| Metal bonding | ||
| Metal bonding | ||
| Fusion bonding | ||
| Fusion bonding | ||
| Adhesive bonding | ||
| Adhesive bonding |
| Please contact us for processing details. |
| Au, Al,Ti, Ni | ||
| Au | ||
| SiO2, SiNx | ||
| Au, Cr, ITO, MO, Si, Al2O3, SiO2, SiNx |
| Coating/developing process included | ||
| Coating/developing process included |
| Max 800 degree C for wide band gap materials | ||
| Max 550 degree C for middle/narrow band gap materials |
| Chlorine species, fluorine species | ||
| Solutions containing arsenic are also applicable. |
| Air spindle type | ||
| ablation mode |
| Blade dicing is possible for difficult-to-cut materials such as SiC and sapphire. If you hope to process these material, please contact us. |
| mainly vertical type. Planer type is avaiable | ||
| 1pA level measurement is possible | ||
| Ta-Vf/PO/WP | ||
| EIAJ ED-4701/100-103, 201-202 are avaiable | ||
| Wire bondning and pull mode test |
| Hall | chip | Van der Pauw |
| ESD(Electro Static Discharge) | chip | MM/HBM |
| Spectrometer | MAX 2" | 190-900nm |
| Thickness measurment | MAX 4" | Step measurment, optical interferometry |
| SAM(Scanning Acoustic Microscope) | MAX 6" | for void analysis at the bonding inetrface |
| Surface defect inspection | MAX 6" | laser based defect inspection |
| PL | 4,6,8" | RT |
| XRD | 4,6,8" | ω-2Θ |
| Particle count | 4,6,8" | |
| Wafer shape measurement | 4,6,8" | TTV, bow |
| ECV(Electrochemical Capacitance-Voltage) | MAX 8" | for depth carrier profile |