As the world's leading silicon wafer (a key substrate for integrated circuits) manufacturer, the Shin-Etsu Group continues to run at the leading edge of high-flatness and larger diameters in its wafer products. It has met early success with strong sales of its cutting-edge 300mm-diameter wafers and SOI wafers. It is steadily supplying these high-quality products to its worldwide customers.

About worldwide network

Product Introduction

300mm silicon wafers

With the arrival of the era of full-scale mass production of 300mm wafers, customers' expectations on silicon wafers are increasingly high. As a pioneer in the world silicon market, Shin-Etsu Handotai (SEH) took the head start of the mass production of 300mm and has established a system ensuring a stable supply to the market.
In responding to even higher requirements from the customers for the future, we continue the incessant efforts and challenges for the quality improvements.

-Features-

• We have respond to the growing market demand in timely manner with our capacity expansions since the starting of the mass production in February 2001.
• Our products can meet the 0.13um design rule process and beyond.
• Our product portfolio covers wide range of the customers' various requirements.

-Applications-

• Substrates for memory devices, microprocessor devices, etc.

-Product Data-

• 300mm Silicon Wafer(PDF)

 

IG-NANA wafers

IG-NANA wafers (annealed wafers) can be used in wide range of device processes, from high-temperature processes to lowtemperature processes. This product can provide high device performances at a reasonable cost.

 

-Features-

• Enhancement of the "getter effect" is achieved with the presence of highly-densed and highly uniformed BMD in the bulk.
• The surface layer is defect-free.
• Suitable for advanced technology processes with narrow design rule
• Available also in 300mm

-Applications-

• Substrates for memory devices, logic devices, etc.

-Product Data-

• IG-NANA Wafer(PDF)

 

SOI (Silicon On Insulator) wafers

SOI wafers, with the structure having insulated oxide film under active silicon layer, are promising semiconductor material for leading edge devices such as high speed and low power consumption LSI, smart sensors, smart power devices and MEMS.

 

-Features-

• Excellent thickness uniformity of SOI layer
• SOI crystal quality equivalent to bulk Silicon wafers
• Buried oxide film quality being equivalent to thermal oxide
• Available for volume supply

-Options: the customers can specify the following items-

• SOI layer thickness and resistivity
• Specification of base and bond wafer
• Buried oxide layer thickness

-Applications-

• High speed/low power/low voltage Ics
• System-On-Chip LSI
• High-temperature electronics
• Radiation-hardened circuits
• Smart power devices
• Smart sensors

-Product Data-

• SOI Wafer(PDF)

 

Product Column

From flint rocks to main memories

Silica rock has been used since ancient times as flint for tools and fire starting. Today, this rock is used as the source for silicon metal, refined to 99.999999999% pure polycrystalline silicon ingots. Shin-Etsu has optimized its crystal-growth technology to produce single crystal wafers about 30 cm (12 in.) in diameter and 1-meter long. The crystal is grown from refined polycrystalline silicon. After it is grown, the single-crystal ingot is thinly sliced into wafers. Shin-Etsu is the world's largest producer of silicon wafers and has manufacturing facilities in Japan, Asia, America and Europe.

 

Contact

Semiconductor Materials Division
Phone : 81-3-3246-5211
Facsimile : 81-3-3246-5335